4200-FLASH型非易失性存储器测试选件

The Model 4200-FLASH package will test single FLASH memory cells or small arrays quickly and easily. This package takes advantage of many of the new features added to the Model 4205-PG2 and includes all the necessary code and the interconnect needed to perform a standard set of Flash memory tests for NAND or NOR technologies, with higher pulse voltages important for MLC technologies. The tests included generate program and/or erase cycles using an easy interface to the patent-pending Segment ARB pulse mode as well as controlling the in-line High Endurance Output Relay. Endurance and Disturb tests are also a snap using the included test code and the long-life Output Relay.

The FLASH package provides an easy-to-understand solution right out of the box and offers easy access to the pulse generators for general purpose pulse applications.

应用

Four channels of multi-level pulse:

    ±40V pulsing into high impedance pin (±20V into 50Ω)

    High Endurance Output Relay provides fast open/close for pin isolation during erase pulse

    Pulse Widths: 200ns to 1s.

    Up to 25 pulse levels (100 pulse segments)

Included tests:

    Endurance

    Program-read

    Erase-read

    Disturb