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非易失性存储器测试选件

2010/5/22 15:37:41 阅读:752次

  • 产品名称:非易失性存储器测试选件
  • 定货号:DL-00087-00
  • 推荐:
The Model 4200-FLASH package will test single FLASH memory cells or small arrays quickly and easily. This package takes advantage of many of the new features added to the Model 4205-PG2 and includes all the necessary code and the interconnect needed to perform a standard set of Flash memory tests for NAND or NOR technologies, with higher pulse voltages important for MLC technologies. The tests included generate program and/or erase cycles using an easy interface to the patent-pending Segment ARB pulse mode as well as controlling the in-line High Endurance Output Relay. Endurance and Disturb tests are also a snap using the included test code and the long-life Output Relay.
The FLASH package provides an easy-to-understand solution right out of the box and offers easy access to the pulse generators for general purpose pulse applications.

应用
Four channels of multi-level pulse:
    ±40V pulsing into high impedance pin (±20V into 50Ω)
    High Endurance Output Relay provides fast open/close for pin isolation during erase pulse
    Pulse Widths: 200ns to 1s.
    Up to 25 pulse levels (100 pulse segments)
Included tests:
    Endurance
    Program-read
    Erase-read
    Disturb
 

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